Ultraviolet (UV) light emitting
diodes (LEDs) and lasers have wide applications in sterilization, environmental
cleaning, medicine, and lighting, among other fields. The unresolved
material-related challenges and problems are a lack of efficient p-type doping
in high-Al-content AlGaN, high threading dislocations and defect densities in
planar UV LEDs grown on foreign substrates, and low light extraction efficiency.
Considerable progress has been made in nanowire-based UV LEDs and lasers
because of the superior crystalline quality (dislocation free) of the AlGaN NW
and the surface-enhanced p-type dopant (Mg) incorporation. The blue, green, and
red LEDs grown using molecular beam epitaxy (MBE) already demonstrated the
potential of nanowires emitters for practical applications, beyond
lighting.
In this project, student involved
will study the growth of III-N nanowires UVLEDs on metal using a molecular beam
epitaxy system. Nanowire materials and nanowire LEDs characterizations using
the various spectroscopy and microscopy, and LED device characterization
techniques will be performed.